TZM5258B Datasheet, TAITRON Components Incorporated

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* Planar Die Construction 500mW Power Dissipation Very Sharp Reverse Characteristic Very High Stability Low Reverse Current .

Power Dissipation at Ta=25° C Forward Voltage Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Value 500 1.1 0.3 175 -65 to +175 Unit mW V K/mW °C °C Conditions PD VF RthJA TJ TSTG IF=200mA Note: Valid provided.